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(R)
MSS40 / 50 Series
BACK TO BACK SCR MODULE
MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IGT Value 55 and 70 800 and 1200 50 Unit A V mA
G2 A2 G1
DESCRIPTION Packaged in ISOTOP modules, the MSS40 / MSS50 Series is based on two back-to-back SCR configurations, providing high noise immunity. They are suitable for high power applications such as solid state relays, heating control systems, welding equipment, motor control circuits... The compactness of the ISOTOP package allows high power density and optimized power bus connections. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (File ref: E81734). PIN CONNECTIONS
A1
ISOTOP(R)
G1
1: Thyristor 2 Anode (A2) 2: Thyristor 2 Gate (G2) 3: Thyristor 1 Anode (A1) 4: Thyristor 1 Gate (G1)
4 1
3
A1 A2
2
G2
ABSOLUTE RATINGS (limiting values)
Symbol Parameter MSS40 IT(RMS) ITSM It dI/dt IGM PG(AV) Tstg Tj VRGM RMS on-state current Non repetitive surge peak on-state current It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage Tc = 80 C Tc = 85 C tp = 16.7 ms Tj = 25C tp = 20 ms tp = 10 ms F = 120 Hz tp = 20 s Tj = 25C Tj = 125C Tj = 125C Tj = 125C 55 420 400 800 50 4 1 - 40 to + 150 - 40 to + 125 5 70 630 600 1800 Value MSS50 A A A2S A/s A W C V 1/5 Unit
ISOTOP is a registred trademark of STMicroelectronics
September 2000 - Ed: 3
MSS40 / 50 Series
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 80 A ITM = 100 A Gate open Tj = 125C Tj = 25C tp = 380 s Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. 11 20 10 RL = 3.3 k Gate open Tj = 125C RL = 33 Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. 1.7 MAX. 0.85 7 1.7 V m A mA Value MSS40 5 50 1.3 0.2 80 120 1000 V V V mA mA V/s MSS50 mA Unit
tp = 380 s
Threshold voltage Dynamic resistance VDRM / VRRM RATED
THERMAL RESISTANCES
Symbol Rth(j-c) Junction to case (AC) Parameter MSS40 MSS50 Value 0.6 0.45 Unit C/W
PRODUCT SELECTOR
Voltage (xxx) Part Number 800 V MSS40-xxx MSS50-xxx X X 1200 V X X 50 mA 50 mA ISOTOPTM ISOTOPTM Sensitivity Package
ORDERING INFORMATION
MSS
SCR MODULE SERIES
40 CURRENT: 40: 55A 50: 70A
800
VOLTAGE: 800: 800V 1200: 1200V
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MSS40 / 50 Series
OTHER INFORMATION
Part Number MSS40-xxx MSS50-xxx
Note: xxx = voltage
Marking MSS40-xxx MSS50-xxx
Weight 27.0 g 27.0 g
Base Quantity 10 10
Packing mode Tube Tube
Fig. 1: Maximum power dissipation versus RMS on-state current.
P(W) 100 90 80 70 60 50 40 30 20 10 0
= 180
Fig. 2: RMS on-state current versus case temperature.
IT(RMS)(A) 80
MSS50
70 60 50 40 30
180
MSS50
=180
MSS40
MSS40
20 10 Tcase(C) 0 25 50 75 100 125 150 0
IT(RMS)(A) 0 10 20 30 40 50 60
70
80
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 C] 2.5 2.0
IGT
K = [Zth(j-c)/Rth(j-c)] 1.0
0.5 1.5
IH & IL
1.0 0.2 0.5 tp(s) 0.1 1E-3 1E-2 1E-1 1E+0 1E+1 0.0 -40 -20 0 20 40 Tj(C) 60 80 100 120 140 160
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MSS40 / 50 Series
Fig. 5: Surge peak on-state current versus number of cycles.
Fig. 6:Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of It.
ITSM(A), I2t(A2S) 5000
ITSM(A) 700
MSS50
600 500
MSS40 Non repetitiv e Tj initial = 25 C MSS50 Repetitive Tcase = 85 C
t = 20ms One cycle
400 300 200 100 0 1
MSS40 Repetitive Tcase = 80 C
1000
Number of cycles 10 100
100 0.01
0.10
1.00
10.00
Fig. 7-1: On-state characteristics (maximum values) (MSS40).
ITM(A) 500
Tj max.: Vto = 0.85V Rd = 11m
Fig. 7-2: On state characteristics (maximum values) (MSS50).
ITM(A) 1000
Tj max.: Vto = 0.85V Rd = 7m Tj = Tjmax.
Tj = Tjmax.
100 100
Tj = 25C Tj = 25C
VTM(V) 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0 10 0.0 1.0 2.0
VTM(V) 3.0 4.0 5.0 6.0
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MSS40 / 50 Series
PACKAGE MECHANICAL DATA ISOTOPTM
DIMENSIONS REF. Millimeters Min. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Max. Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.976 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 typ. 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193
11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30
s s
Recommended torque value: 1.3 Nm (max. 1.5 Nm) for the 6 x M4 screws (2 x M4 screws recommended for mounting the package on the heatsink and the 4 provided screws. The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min. and 2.2 mm max.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www.st.com
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